TC58DVG02A1FT00 datasheet, cmos equivalent, Toshiba Semiconductor

TC58DVG02A1FT00 cmos equivalent, mos digital integrated circuit silicon gate cmos.

Features and benefits

x Organization Memory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K 512) bytes x Modes Read, Reset, Auto Page Program, Auto Block Era.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The device has a 528-byte static register which allows program an.

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